2SA1434 features adoption of fbet process. high dc current gain (h fe =500 to 1200). low collector-to-emitter saturation voltage (v ce (sat) 0.5v). high v ebo (v ebo 15v). 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -15 v collector current i c -100 ma collector current (pulse) i cp -200 ma collector dissipation p c 200 mw junction temperature t j 125 storage temperature t stg -55to+125 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = -40v, i e =0 -0.1 a emitter cutoff current i ebo v eb = -10v, i c =0 -0.1 a dc current gain h fe v ce =-5v,i c = -10ma 500 800 1200 gain bandwidth product f t v ce = -10v , i c = -10ma 100 mhz output capacitance c ob v cb = -10v , f = 1.0mhz 4.8 pf collector-emitter saturation voltage v ce(sat) i c = -50ma , i b = -1ma -0.2 -0.5 v base-emitter saturation voltage v be(sat) i c = -10a , i b = -1ma -0.8 -1.1 v collector-base breakdown voltage v (br)cbo i c = -10a , i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -50 v emitter-base breakdown voltage v (br)ebo i e = -10a , i c =0 -15 v marking marking fl product specification 1 sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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